Power Mosfet - Circuitos electrónicos
Overview: Critical loads often employ parallel-connected powersupplies with redundancy in order to enhance systemreliability. The MAX8535/MAX8536/MAX8585 are highlyintegrated but inexpensive MOSFET controllers that provideisolation and redu
NexFET power MOSFET technology delivers half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency.
Overview: The MAX8704 high-current linear regulator uses anexternal n-channel MOSFET to generate low-voltagesupplies for notebook computers. This linear regulatordelivers an output voltage as low as 0.5V from an inputvoltage as low as 1. 0V.
One still designing that it uses in the exit transistor of technology V-mosfet. This transistors to us offer a lot of virtues concerning the simple bipolar transistors, as high speeds, thermic stability, low distortion etc.
To protect MOSFET or IGBT modules in the event of malfunction/errors, the use of different efficient, quick-response protection functions in the driver is .
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PWM Power Controller
Power Tip 42 (Part 1): Discrete devices - a good alternative to integrated MOSFET drivers
MOSFET power audio amplifier circuit diagram electronic project using few electronic parts.
The circuit uses an inexpensive C-MOS inverter package and a few small capacitors to drive two power MOS transistors from a 12v to 15v supply. Since the coupling capacitor values used to drive the FETs are small, the leakage current from the power line into the control circuit is a tiny 4uA. Only about 1.5mA of DC is needed to turn on and off 400 watts of AC or DC power to a load........
Simple Class-A power amp that uses complementary pair of IRFP240 and IRFP9240 MOSFET transistors. The intention of this project was to build simple, but high quality amplifier. The aim was reached by integrating the whole input driver in one IC and adding high power transistor output stage. As you can see on the schematic the amplifier has very simple structure. At the input there is high quality and relative high power TI IC OPA552. It drives a complementary pair od MOSFET transistors IRFP240.......
The primary-side PWM integrated Power MOSFET, FSEZ1216, significantly simplifies power supply design that requires CV and CC regulation capabilities. FSEZ1216 controls the output voltage and current precisely only with the information in the primary side of the power supply, not only removing the output current sensing loss, but also eliminating all secondary feedback circuitry. The green-mode function with a low startup current (10ÂµA) maximizes the light load efficiency so the power supply can.......
Here the 400W RF power amplifier circuit build using power MOSFET FQA11N90. This Class E RF amplifier will provide approximately 400 watts of RF output, depending on the input voltage and tuning parameters (current). The amplifier utilizes low-cost IXDD414 Driver ICs - one for each two MOSFETs. Transient Voltage Supressors (TVS devices) are applied on the gates,.......
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